IndiumV3, Main, Repository, bibRecord, 000696

Polarization-Dependent and Ellipsometric Infrared Microscopy for Analysis of Anisotropic Thin Films

Identifieur interne : 000696 ( Main/Repository ); précédent : 000695; suivant : 000697

Polarization-Dependent and Ellipsometric Infrared Microscopy for Analysis of Anisotropic Thin Films

Auteurs : RBID : Pascal:13-0252611

Descripteurs français

Pascal (Inist)
- Polarisation, Ellipsométrie, Anisotropie, Couche mince, Fonction diélectrique, Propriété électronique, Conductivité électronique, Conductivité électrique, Orientation moléculaire, Capteur optique, Spectrométrie transformée Fourier, Spectrométrie FTIR, Epaisseur couche, Propriété optique, Oxyde de silicium, Oxyde d'indium, Oxyde d'étain, Imide polymère, 6855J, 7820.

English descriptors

KwdEn :
- Anisotropy, Dielectric function, Electrical conductivity, Electronic conductivity, Electronic properties, Ellipsometry, Fourier transform spectroscopy, Fourier-transformed infrared spectrometry, Indium oxide, Layer thickness, Molecular orientation, Optical properties, Optical sensors, Polarization, Polyimides, Silicon oxides, Thin films, Tin oxide.

Abstract

Dielectric functions and anisotropic thin film properties such as electronic conductivity or molecular orientations are of high technological importance for engineering efficient optical, electronic, and sensing devices. This work demonstrates for the first time how full-scale polarization-dependent Fourier-transform infrared (FTIR) microscopy may be used for quantitative determination of polarized reflection coefficients of thin film samples with thicknesses down to a few nanometers. Out-of-plane and in-plane optical properties of thin silicon oxide, indium tin oxide (ITO), and polyimide films are measured and characterized quantitatively with respect to anisotropy and thickness. Sample homogeneity is accessed using FTIR microscopic mapping. By performing measurements at multiple polarizer azimuths we demonstrate the technique of ellipsometric microscopy. Exemplarily eilipsometric measurements of a polyimide film are presented and discussed. We describe how introducing a retarder into the optical path would enable sensitive phase measurements via generalized infrared ellipsometric microscopy.

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Pascal:13-0252611

Le document en format XML

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<author><name sortKey="Hinrichs, Karsten" uniqKey="Hinrichs K">Karsten Hinrichs</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V., Department Berlin, Albert-Einstein-Strasse 9</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
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<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
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<author><name sortKey="Furchner, Andreas" uniqKey="Furchner A">Andreas Furchner</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V., Department Berlin, Albert-Einstein-Strasse 9</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
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<author><name sortKey="Rappich, J Rg" uniqKey="Rappich J">J Rg Rappich</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium-Photovoltaik, Kekuléstrasse 5</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
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<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
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<author><name sortKey="Oates, Thomas W H" uniqKey="Oates T">Thomas W. H. Oates</name>
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<title level="j" type="abbreviated">J. phys. chem., C</title>
<title level="j" type="main">Journal of physical chemistry. C</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anisotropy</term>
<term>Dielectric function</term>
<term>Electrical conductivity</term>
<term>Electronic conductivity</term>
<term>Electronic properties</term>
<term>Ellipsometry</term>
<term>Fourier transform spectroscopy</term>
<term>Fourier-transformed infrared spectrometry</term>
<term>Indium oxide</term>
<term>Layer thickness</term>
<term>Molecular orientation</term>
<term>Optical properties</term>
<term>Optical sensors</term>
<term>Polarization</term>
<term>Polyimides</term>
<term>Silicon oxides</term>
<term>Thin films</term>
<term>Tin oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Polarisation</term>
<term>Ellipsométrie</term>
<term>Anisotropie</term>
<term>Couche mince</term>
<term>Fonction diélectrique</term>
<term>Propriété électronique</term>
<term>Conductivité électronique</term>
<term>Conductivité électrique</term>
<term>Orientation moléculaire</term>
<term>Capteur optique</term>
<term>Spectrométrie transformée Fourier</term>
<term>Spectrométrie FTIR</term>
<term>Epaisseur couche</term>
<term>Propriété optique</term>
<term>Oxyde de silicium</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Imide polymère</term>
<term>6855J</term>
<term>7820</term>
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<front><div type="abstract" xml:lang="en">Dielectric functions and anisotropic thin film properties such as electronic conductivity or molecular orientations are of high technological importance for engineering efficient optical, electronic, and sensing devices. This work demonstrates for the first time how full-scale polarization-dependent Fourier-transform infrared (FTIR) microscopy may be used for quantitative determination of polarized reflection coefficients of thin film samples with thicknesses down to a few nanometers. Out-of-plane and in-plane optical properties of thin silicon oxide, indium tin oxide (ITO), and polyimide films are measured and characterized quantitatively with respect to anisotropy and thickness. Sample homogeneity is accessed using FTIR microscopic mapping. By performing measurements at multiple polarizer azimuths we demonstrate the technique of ellipsometric microscopy. Exemplarily eilipsometric measurements of a polyimide film are presented and discussed. We describe how introducing a retarder into the optical path would enable sensitive phase measurements via generalized infrared ellipsometric microscopy.</div>
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<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Dielectric functions and anisotropic thin film properties such as electronic conductivity or molecular orientations are of high technological importance for engineering efficient optical, electronic, and sensing devices. This work demonstrates for the first time how full-scale polarization-dependent Fourier-transform infrared (FTIR) microscopy may be used for quantitative determination of polarized reflection coefficients of thin film samples with thicknesses down to a few nanometers. Out-of-plane and in-plane optical properties of thin silicon oxide, indium tin oxide (ITO), and polyimide films are measured and characterized quantitatively with respect to anisotropy and thickness. Sample homogeneity is accessed using FTIR microscopic mapping. By performing measurements at multiple polarizer azimuths we demonstrate the technique of ellipsometric microscopy. Exemplarily eilipsometric measurements of a polyimide film are presented and discussed. We describe how introducing a retarder into the optical path would enable sensitive phase measurements via generalized infrared ellipsometric microscopy.</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Polarisation</s0>
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<s5>06</s5>
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<s5>07</s5>
</fC03>
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<s5>07</s5>
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<fC03 i1="07" i2="X" l="SPA"><s0>Conductividad electrónica</s0>
<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>Capteur optique</s0>
<s5>10</s5>
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<fC03 i1="10" i2="3" l="ENG"><s0>Optical sensors</s0>
<s5>10</s5>
</fC03>
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<s5>11</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Fourier transform spectroscopy</s0>
<s5>11</s5>
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<fC03 i1="12" i2="X" l="FRE"><s0>Spectrométrie FTIR</s0>
<s5>12</s5>
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<s5>12</s5>
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<fC03 i1="12" i2="X" l="SPA"><s0>Espectrometría FTIR</s0>
<s5>12</s5>
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<s5>13</s5>
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<s2>NK</s2>
<s5>29</s5>
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<s5>30</s5>
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<s5>30</s5>
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<s5>30</s5>
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<fC03 i1="17" i2="X" l="FRE"><s0>Oxyde d'étain</s0>
<s5>31</s5>
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<fC03 i1="17" i2="X" l="ENG"><s0>Tin oxide</s0>
<s5>31</s5>
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<s5>31</s5>
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<s2>NK</s2>
<s5>32</s5>
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<s2>NK</s2>
<s5>32</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>71</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>7820</s0>
<s4>INC</s4>
<s5>72</s5>
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Polarization-Dependent and Ellipsometric Infrared Microscopy for Analysis of Anisotropic Thin Films

Polarization-Dependent and Ellipsometric Infrared Microscopy for Analysis of Anisotropic Thin Films

Descripteurs français

English descriptors

Abstract

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